MHPA19010N 1 rf device data freescale semiconductor pcs band rf linear ldmos amplifier designed for class ab amplifier applications in 50 ohm system s operating in the pcs frequency band. a silicon fet design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteris- tics are ideal for digital modulation systems, such as tdma and cdma. ? typical cdma performance: 1960 mhz, 28 volts is - 95 cdma pilot, sync, paging, traffic codes 8 through 13 ? adjacent channel power: - 51 dbc @ 30 dbm, 885 khz channel spacing ? power gain: 24.5 db min (@ f = 1960 mhz) ? 0.2 db typical gain flatness features ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications ? n suffix indicates lead - free terminations table 1. maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power (single carrier cw) p in +20 dbm storage temperature range t stg - 40 to +100 c operating case temperature range t c - 20 to +100 c quiescent bias current i dq 750 ma table 2. electrical characteristics (v dd = 28 vdc, v bias ? 8 v set for supply current of 600 ma, t c = 25 c, 50 system) characteristic symbol min typ max unit supply current i dd ? 600 ? ma power gain (f = 1960 mhz) g p 24.5 25 ? db gain flatness (f = 1930 - 1990 mhz) g f ? 0.2 0.5 db power output @ 1 db comp. (f = 1960 mhz) p1db ? 41.5 ? dbm input vswr (f = 1930 - 1990 mhz) vswr in ? 1.5:1 2:1 noise figure (f = 1960 mhz) nf ? 8 10 db adjacent channel power rejection @ 30 dbm, 1.23 mhz bw, 885 khz channel spacing acpr ? -58 -51 dbc document number: MHPA19010N rev. 6, 5/2006 freescale semiconductor technical data MHPA19010N 1930- 1990 mhz 10 w, 24.5 db rf high power ldmos amplifier case 301ap - 02, style 3 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor MHPA19010N typical characteristics 1990 ?30 10 1930 20 28 irl g ps orl f, frequency (mhz) figure 1. two - tone power gain, input return loss and output return loss versus frequency irl/orl, input/output return loss (db) v dd = 28 vdc p out = 5 w i dq = 600 ma 100 khz tone spacing 527 026 ?5 25 ?10 24 ?15 23 ?20 22 ?25 21 1940 1950 1960 1970 1980 g ps , power gain (db) 2000 20 28 1920 4 20 g ps f, frequency (mhz) figure 2. 2 - carrier cdma power gain and efficiency versus frequency g ps , power gain (db) , drain efficiency (%) 2?carrier cdma carrier spacing = 2.5 mhz carrier bandwidth = 1.2288 mhz 1930 1940 1950 1960 1970 1980 1990 27 18 26 16 25 14 24 12 23 10 22 8 21 6 v dd = 28 vdc p out = 1 w (avg.) i dq = 600 ma ?10 c 85 c ?10 c 25 c 85 c t c = 25 c acpr 2000 ?60 ?35 1920 ?70 ?20 f, frequency (mhz) figure 3. 2 - carrier cdma im3 and acpr versus frequency acpr, adjacent channel power ratio (dbc) acpr @ 885 khz, bandwidth = 30 khz im3 @ 2.5 mhz, bandwidth = 1.2288 mhz v dd = 28 vdc, p out = 1 w (avg.), i dq = 600 ma 85 c ?10 c 25 c 85 c im3 25 c 2?carrier cdma, carrier spacing = 2.5 mhz carrier bandwidth = 1.2288 mhz t c = ?10 c ?40 ?30 ?45 ?40 ?50 ?50 ?55 ?60 1930 1940 1950 1960 1970 1980 1990 40 ?60 ?25 15 100 khz p out , output power (dbm) pep figure 4. two - tone cdma imd versus output power intermodulation distortion (dbc) imd, v dd = 28 vdc, i dq = 600 ma 100 khz: f1 = 1959.95 mhz f2 = 1960.05 mhz 10 mhz: f1 = 1955 mhz f2 = 1965 mhz 35 30 25 20 ?30 ?35 ?40 ?45 ?50 ?55 10 mhz 40 ?60 ?25 15 i dq = 800 ma 500 ma p out , output power (dbm) pep figure 5. third order intermodulation distortion versus output power im3, third order intermodulation distortion (dbc) v dd = 28 vdc f1 = 1959.95 mhz f2 = 1960.05 mhz 700 ma 600 ma ?30 ?35 ?40 ?45 ?50 ?55 35 30 25 20 25 0 48 ?5 23.5 27.5 g ps p in , (dbm) figure 6. cw output power, efficiency and gain versus input power , drain efficiency (%), p out output power (dbm) v dd = 28 vdc i dq = 600 ma f = 1960 mhz p out g ps , power gain (db) 0 5 10 15 20 42 27 36 26.5 30 26 24 25.5 18 25 12 24.5 624 im3, third order intermodulation distortion (dbc)
MHPA19010N 3 rf device data freescale semiconductor typical characteristics figure 7. 2 - carrier cdma acpr, im3 and efficiency versus output power im3 (dbc), acpr (dbc) , drain efficiency (%)
4 rf device data freescale semiconductor MHPA19010N notes
MHPA19010N 5 rf device data freescale semiconductor notes
6 rf device data freescale semiconductor MHPA19010N notes
MHPA19010N 7 rf device data freescale semiconductor package dimensions notes: 1. interpret dimensions and tolerances per asme y14.5m, 1994. 2. controlling dimension: inch. 3. dimension "f" to center of leads. g w n l h r k j a m 0.020 (0.51) t m m 0.020 (0.51) t 12 34 f e c seating plane dim min max min max millimeters inches a 1.760 1.780 44.70 b 1.370 1.390 34.80 35.31 c 0.245 0.265 6.22 6.73 d 0.017 0.023 0.43 0.58 e 0.080 0.100 2.03 2.54 f 0.086 bsc 2.18 bsc g 1.650 bsc 41.91 bsc h 1.290 bsc 32.77 bsc j 0.266 0.280 6.76 7.11 k 0.125 0.165 3.18 4.19 l 0.990 bsc 25.15 bsc 0.390 bsc 9.91 bsc n p 0.118 0.132 3.00 3.35 q r 0.535 0.555 13.59 14.10 s 0.445 0.465 11.30 11.81 w 45.21 case 301ap - 02 issue e b m 0.020 (0.51) t m m s m 0.008 (0.20) a m t 0.090 bsc 2.29 bsc 0.008 0.013 0.20 0.33 style 3: pin 1. rf input 2. vbias 3. vdd 4. rf output case: ground d 4x q 2x b a s s a t p 4x note: v dd (pin 3) should always be applied before v bias (pin 2).
8 rf device data freescale semiconductor MHPA19010N information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MHPA19010N rev. 6, 5/2006 rohs- compliant and/or pb - free versions of freescale products have the functionality and electrical characteristics of their non - rohs- compliant and/or non - pb - free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products program, go to http://www .freescale.com/epp.
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